IRFP264 Vishay Semiconductor
Hersteller: Vishay SemiconductorN-канальний ПТ; Udss, В = 250; Id = 38 А; Ptot, Вт = 280; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 5400 @ 25; Qg, нКл = 210; Rds = 75 мОм; Tексп, °C = -55...+150; Ugs(th) = 3; TO-247AC
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 6.44 EUR |
| 10+ | 5.55 EUR |
| 100+ | 4.88 EUR |
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Technische Details IRFP264 Vishay Semiconductor
Description: MOSFET N-CH 250V 38A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V, Power Dissipation (Max): 280W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V.
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Verfügbarkeit |
Preis ohne MwSt |
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IRFP264 | Hersteller : Vishay |
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IRFP264 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 38A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
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IRFP264 | Hersteller : IXYS |
Description: MOSFET N-CH 250V 38A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 23A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V |
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IRFP264 | Hersteller : Vishay / Siliconix |
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IRFP264 | Hersteller : IXYS |
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