Produkte > IRF > IRFP26N60L

IRFP26N60L


Hersteller:

auf Bestellung 6800 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details IRFP26N60L

Description: MOSFET N-CH 600V 26A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V, Power Dissipation (Max): 470W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V.

Weitere Produktangebote IRFP26N60L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFP26N60L IRFP26N60L Hersteller : Vishay irfp26n60l.pdf Trans MOSFET N-CH 600V 26A 3-Pin(3+Tab) TO-247AC
Produkt ist nicht verfügbar
IRFP26N60L IRFP26N60L Hersteller : Vishay Siliconix Description: MOSFET N-CH 600V 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5020 pF @ 25 V
Produkt ist nicht verfügbar
IRFP26N60L IRFP26N60L Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT IRFP26N60LPBF
Produkt ist nicht verfügbar