IRFP27N60KPBF VISHAY
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 218 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
11+ | 7.14 EUR |
15+ | 4.98 EUR |
16+ | 4.7 EUR |
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Technische Details IRFP27N60KPBF VISHAY
Description: MOSFET N-CH 600V 27A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V.
Weitere Produktangebote IRFP27N60KPBF nach Preis ab 4.7 EUR bis 22.8 EUR
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IRFP27N60KPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 500W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP27N60KPBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 125 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP27N60KPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 27A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 25 V |
auf Bestellung 3275 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFP27N60KPBF | Hersteller : Vishay Semiconductors | MOSFET RECOMMENDED ALT IRFP27N60K |
auf Bestellung 3414 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFP27N60KPBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 27A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP27N60KPBF | Hersteller : VISHAY |
Description: VISHAY - IRFP27N60KPBF - Leistungs-MOSFET, n-Kanal, 600 V, 27 A, 0.22 ohm, TO-247AC, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 500W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.22ohm |
auf Bestellung 517 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP27N60KPBF Produktcode: 91814 |
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