Technische Details IRFPC50LCPBF Vishay
Description: MOSFET N-CH 600V 11A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V.
Weitere Produktangebote IRFPC50LCPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRFPC50LCPBF | Hersteller : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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IRFPC50LCPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 11A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFPC50LCPBF | Hersteller : Vishay Semiconductors |
MOSFET 600V N-CH HEXFET |
Produkt ist nicht verfügbar |
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| IRFPC50LCPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 44A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |