IRFR014TRLPBF
verfügbar/auf Bestellung
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details IRFR014TRLPBF
Description: MOSFET N-CH 60V 7.7A DPAK, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D-Pak, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Preis IRFR014TRLPBF ab 0 EUR bis 0 EUR
IRFR014TRLPBF Hersteller: Vishay Semiconductors MOSFET 60V N-CH HEXFET MOSFET D-PAK ![]() |
auf Bestellung 567 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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IRFR014TRLPBF Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) ![]() |
auf Bestellung 1834 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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IRFR014TRLPBF Hersteller: Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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