IRFR024NPBF International Rectifier/Infineon
Hersteller: International Rectifier/InfineonN-канальний ПТ; Udss, В = 55; Id = 17 А; Ptot, Вт = 45; Тип монт. = smd; Ciss, пФ @ Uds, В = 370 пФ @ 25 В; Qg, нКл = 20 @ 10 В; Rds = 75 мОм @ 10 А, 10 В; Tексп, °C = -55...+175; Ugs(th) = 4 В @ 250 мкА; DPAK
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.79 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.51 EUR |
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Technische Details IRFR024NPBF International Rectifier/Infineon
Description: MOSFET N-CH 55V 17A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
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IRFR024NPBF Produktcode: 34111 |
Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: D-Pak Uds,V: 55 Idd,A: 16 Rds(on), Ohm: 0.075 Ciss, pF/Qg, nC: 370/20 JHGF: SMD |
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IRFR024NPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 17A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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