IRFR110TRLPBF

IRFR110TRLPBF Vishay Semiconductors


sihfr110.pdf Hersteller: Vishay Semiconductors
MOSFET 100V N-CH HEXFET D-PAK
auf Bestellung 2059 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.23 EUR
27+ 1.96 EUR
100+ 1.33 EUR
500+ 1.14 EUR
Mindestbestellmenge: 24
Produktrezensionen
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Technische Details IRFR110TRLPBF Vishay Semiconductors

Description: MOSFET N-CH 100V 4.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.

Weitere Produktangebote IRFR110TRLPBF nach Preis ab 1.41 EUR bis 3.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFR110TRLPBF IRFR110TRLPBF Hersteller : Vishay Siliconix sihfr110.pdf Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
500+ 1.73 EUR
1000+ 1.41 EUR
Mindestbestellmenge: 9
IRFR110TRLPBF IRFR110TRLPBF Hersteller : Vishay sihfr110.pdf Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IRFR110TRLPBF IRFR110TRLPBF Hersteller : Vishay sihfr110.pdf Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IRFR110TRLPBF IRFR110TRLPBF Hersteller : Vishay sihfr110.pdf Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IRFR110TRLPBF Hersteller : VISHAY sihfr110.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
IRFR110TRLPBF IRFR110TRLPBF Hersteller : Vishay Siliconix sihfr110.pdf Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
IRFR110TRLPBF Hersteller : VISHAY sihfr110.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar