IRFR1205PBF

IRFR1205PBF Infineon Technologies


infineon-irfr1205-datasheet-v01_01-en.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK Tube
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Technische Details IRFR1205PBF Infineon Technologies

Description: MOSFET N-CH 55V 44A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.

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IRFR1205PBF IRFR1205PBF Hersteller : Infineon Technologies infineon-irfr1205-datasheet-v01_01-en.pdf Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK Tube
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IRFR1205PBF IRFR1205PBF Hersteller : International Rectifier HiRel Products infineon-irfr1205-datasheet-v01_01-en.pdf Trans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK Tube
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IRFR1205PBF IRFR1205PBF Hersteller : Infineon Technologies irfr1205pbf.pdf?fileId=5546d462533600a40153562d17792047 Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRFR1205PBF IRFR1205PBF Hersteller : Infineon Technologies Infineon_IRFR1205_DataSheet_v01_01_EN-3166392.pdf MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC
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