Technische Details IRFR15N20DPBF Infineon / IR
Description: MOSFET N-CH 200V 17A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V, Power Dissipation (Max): 3W (Ta), 140W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V.
Weitere Produktangebote IRFR15N20DPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| IRFR15N20DPBF | Hersteller : IR |
 TO-252 10+ |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR15N20DPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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IRFR15N20DPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 17A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 140W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V |
Produkt ist nicht verfügbar |