IRFR1N60ATRLPBF

IRFR1N60ATRLPBF

IRFR1N60ATRLPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount

sihfr1n6.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 100 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.93 EUR
10+ 3.54 EUR
100+ 2.84 EUR

Technische Details IRFR1N60ATRLPBF

Description: MOSFET N-CH 600V 1.4A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D-Pak, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Preis IRFR1N60ATRLPBF ab 2.5 EUR bis 4.21 EUR

IRFR1N60ATRLPBF
IRFR1N60ATRLPBF
Hersteller: Vishay Semiconductors
MOSFET N-Chan 600V 1.4 Amp
sihfr1n6-1769002.pdf
auf Bestellung 6044 Stücke
Lieferzeit 14-28 Tag (e)
13+ 4.21 EUR
14+ 3.8 EUR
100+ 3.07 EUR
500+ 2.5 EUR
IRFR1N60ATRLPBF
Hersteller: Vishay
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R
sihfr1n6.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR1N60ATRLPBF
IRFR1N60ATRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
sihfr1n6.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen