auf Bestellung 29376 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 2.35 EUR |
| 31+ | 1.69 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.14 EUR |
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Technische Details IRFR210PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.
Weitere Produktangebote IRFR210PBF-BE3 nach Preis ab 1.12 EUR bis 2.7 EUR
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IRFR210PBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 200V 2.6A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
auf Bestellung 2984 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRFR210PBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 2.6A |
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