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IRFR210TRLPBF-BE3

IRFR210TRLPBF-BE3 Vishay Siliconix


sihfr210.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.12 EUR
Mindestbestellmenge: 3000
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Technische Details IRFR210TRLPBF-BE3 Vishay Siliconix

Description: MOSFET N-CH 200V 2.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.

Weitere Produktangebote IRFR210TRLPBF-BE3 nach Preis ab 1.14 EUR bis 2.7 EUR

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Preis ohne MwSt
IRFR210TRLPBF-BE3 IRFR210TRLPBF-BE3 Hersteller : Vishay / Siliconix sihfr210.pdf MOSFET 200V N-CH HEXFET D-PAK
auf Bestellung 23999 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
23+2.35 EUR
28+ 1.92 EUR
100+ 1.5 EUR
500+ 1.27 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 23
IRFR210TRLPBF-BE3 IRFR210TRLPBF-BE3 Hersteller : Vishay Siliconix sihfr210.pdf Description: MOSFET N-CH 200V 2.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 5996 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.7 EUR
12+ 2.22 EUR
100+ 1.73 EUR
500+ 1.46 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 10
IRFR210TRLPBF-BE3 Hersteller : Vishay sihfr210.pdf Trans MOSFET N-CH 200V 2.6A
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