auf Bestellung 1653 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 2.56 EUR |
| 25+ | 2.11 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.45 EUR |
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Technische Details IRFR214PBF Vishay Semiconductors
Description: MOSFET N-CH 250V 2.2A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D-Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.
Weitere Produktangebote IRFR214PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRFR214PBF | Hersteller : IR |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR214PBF | Hersteller : Vishay |
Trans MOSFET N-CH 250V 2.2A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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IRFR214PBF | Hersteller : Vishay |
Trans MOSFET N-CH 250V 2.2A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| IRFR214PBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.2A Pulsed drain current: 8.8A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFR214PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 2.2A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRFR214PBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 2.2A Pulsed drain current: 8.8A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |