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IRFR214TRPBF

IRFR214TRPBF Vishay


sihfr214.pdf Hersteller: Vishay
Trans MOSFET N-CH 250V 2.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1962 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
178+0.89 EUR
180+ 0.85 EUR
193+ 0.76 EUR
250+ 0.72 EUR
500+ 0.65 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 178
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Technische Details IRFR214TRPBF Vishay

Description: MOSFET N-CH 250V 2.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D-Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.

Weitere Produktangebote IRFR214TRPBF nach Preis ab 0.57 EUR bis 3.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFR214TRPBF IRFR214TRPBF Hersteller : Vishay sihfr214.pdf Trans MOSFET N-CH 250V 2.2A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1962 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
172+0.92 EUR
178+ 0.86 EUR
180+ 0.82 EUR
193+ 0.73 EUR
250+ 0.7 EUR
500+ 0.62 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 172
IRFR214TRPBF IRFR214TRPBF Hersteller : Vishay Semiconductors sihfr214.pdf MOSFET N-Chan 250V 2.2 Amp
auf Bestellung 323 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.7 EUR
24+ 2.23 EUR
100+ 1.76 EUR
500+ 1.51 EUR
1000+ 1.27 EUR
2000+ 1.26 EUR
24000+ 1.23 EUR
Mindestbestellmenge: 20
IRFR214TRPBF IRFR214TRPBF Hersteller : Vishay Siliconix sihfr214.pdf Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 1947 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.46 EUR
10+ 3.07 EUR
100+ 2.4 EUR
500+ 1.98 EUR
1000+ 1.56 EUR
Mindestbestellmenge: 8
IRFR214TRPBF IRFR214TRPBF Hersteller : Vishay 91269.pdf Trans MOSFET N-CH 250V 2.2A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IRFR214TRPBF IRFR214TRPBF Hersteller : Vishay sihfr214.pdf Trans MOSFET N-CH 250V 2.2A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IRFR214TRPBF Hersteller : VISHAY sihfr214.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
IRFR214TRPBF IRFR214TRPBF Hersteller : Vishay Siliconix sihfr214.pdf Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
IRFR214TRPBF Hersteller : VISHAY sihfr214.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 2.2A; Idm: 8.8A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 2.2A
Pulsed drain current: 8.8A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar