IRFR214TRRPBF

IRFR214TRRPBF

IRFR214TRRPBF

Hersteller: Vishay Semiconductors
MOSFET 250V N-CH HEXFET D-PAK
VISHS05424_1-2565984.pdf
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Technische Details IRFR214TRRPBF

Description: MOSFET N-CH 250V 2.2A DPAK, Base Part Number: IRFR214, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: D-Pak, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Drain to Source Voltage (Vdss): 250V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

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IRFR214TRRPBF
IRFR214TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A DPAK
Base Part Number: IRFR214
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
91269.pdf
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