auf Bestellung 2876 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.41 EUR |
| 19+ | 2.81 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.85 EUR |
| 1000+ | 1.51 EUR |
| 3000+ | 1.5 EUR |
| 9000+ | 1.47 EUR |
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Technische Details IRFR224TRLPBF Vishay Semiconductors
Description: MOSFET N-CH 250V 3.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D-Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
Weitere Produktangebote IRFR224TRLPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IRFR224TRLPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| IRFR224TRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; Idm: 15A; 42W Mounting: SMD Case: DPAK; TO252 Power dissipation: 42W Kind of package: reel; tape On-state resistance: 1.1Ω Pulsed drain current: 15A Gate charge: 14nC Polarisation: unipolar Drain current: 3.8A Kind of channel: enhanced Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRFR224TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 3.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRFR224TRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; Idm: 15A; 42W Mounting: SMD Case: DPAK; TO252 Power dissipation: 42W Kind of package: reel; tape On-state resistance: 1.1Ω Pulsed drain current: 15A Gate charge: 14nC Polarisation: unipolar Drain current: 3.8A Kind of channel: enhanced Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |