IRFR224TRLPBF

IRFR224TRLPBF

IRFR224TRLPBF

Hersteller: Vishay Semiconductors
MOSFET N-Chan 250V 3.8 Amp
VISH_S_A0012662115_1-2572699.pdf
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Lieferzeit 14-28 Tag (e)

Technische Details IRFR224TRLPBF

Description: MOSFET N-CH 250V 3.8A DPAK, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: D-Pak, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Drain to Source Voltage (Vdss): 250V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR).

Preis IRFR224TRLPBF ab 0 EUR bis 0 EUR

IRFR224TRLPBF
IRFR224TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
sihfr224.pdf
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