IRFR2307ZPBF
Produktcode: 42438
Hersteller: IRGehäuse: D-Pak
Uds,V: 75 V
Idd,A: 42 A
Rds(on), Ohm: 16 Ohm
Ciss, pF/Qg, nC: 2190/50
JHGF: SMD
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Technische Details IRFR2307ZPBF IR
- MOSFET, N, D-PAK
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:75V
- Cont Current Id:42A
- On State Resistance:0.016ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:DPAK
- Termination Type:SMD
- Alternate Case Style:TO-252
- Current Temperature:25`C
- External Depth:10.5mm
- External Length / Height:2.55mm
- External Width:6.8mm
- Full Power Rating Temperature:25`C
- Max Power Dissipation Ptot:110W
- Max Voltage Vds:75V
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation:110W
- Power Dissipation Pd:110W
- Pulse Current Idm:210A
- SMD Marking:IRFR2307ZPBF
- Transistor Case Style:D-PAK
Weitere Produktangebote IRFR2307ZPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IRFR2307ZPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 42A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR2307ZPBF | Hersteller : Infineon / IR |
MOSFET 75V 1 N-CH HEXFET 16mOhms 50nC |
Produkt ist nicht verfügbar |