IRFR6215PBF International Rectifier/Infineon
Hersteller: International Rectifier/Infineon
P-канальний ПТ; Udss, В = 150; Id = 13 А; Ptot, Вт = 110; Тип монт. = smd; Ciss, пФ @ Uds, В = 860 @ 25; Qg, нКл = 66 @ 10 В; Rds = 295 мОм @ 6,6 A, 10 В; Tексп, °C = -55...+175; Ugs(th) = 4 В @ 250 мкА; D-PAK
P-канальний ПТ; Udss, В = 150; Id = 13 А; Ptot, Вт = 110; Тип монт. = smd; Ciss, пФ @ Uds, В = 860 @ 25; Qg, нКл = 66 @ 10 В; Rds = 295 мОм @ 6,6 A, 10 В; Tексп, °C = -55...+175; Ugs(th) = 4 В @ 250 мкА; D-PAK
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 3.09 EUR |
10+ | 2.38 EUR |
100+ | 2.09 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFR6215PBF International Rectifier/Infineon
Description: MOSFET P-CH 150V 13A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V.
Weitere Produktangebote IRFR6215PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IRFR6215PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 150V 13A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
Produkt ist nicht verfügbar |
||
IRFR6215PBF | Hersteller : Infineon Technologies | MOSFETs 1 P-CH -150V HEXFET 580mOhms 44nC |
Produkt ist nicht verfügbar |
||
IRFR6215PBF | Hersteller : Infineon (IRF) |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -13A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |