Technische Details IRFR9210 IR
Description: MOSFET P-CH 200V 1.9A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D-Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRFR9210
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRFR9210 | Hersteller : IR | 07+ TO-252 |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRFR9210 | Hersteller : IR | 09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRFR9210 | Hersteller : IR | TO-252 |
auf Bestellung 10669 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR9210 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 1.9A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR9210 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT 844-IRFR9210PBF |
Produkt ist nicht verfügbar |