IRFR9210TRLPBF
IRFR9210TRLPBF
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 200V 1.9A DPAK
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
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Technische Details IRFR9210TRLPBF
Description: MOSFET P-CH 200V 1.9A DPAK, Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Drain to Source Voltage (Vdss): 200V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: D-Pak, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA.