auf Bestellung 14200 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
21+ | 2.56 EUR |
24+ | 2.19 EUR |
100+ | 1.85 EUR |
500+ | 1.65 EUR |
1000+ | 1.54 EUR |
9000+ | 1.5 EUR |
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Technische Details IRFR9310TRLPBF Vishay Semiconductors
Description: MOSFET P-CH 400V 1.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V.
Weitere Produktangebote IRFR9310TRLPBF nach Preis ab 2.04 EUR bis 3.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFR9310TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 400V 1.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
auf Bestellung 953 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFR9310TRLPBF | Hersteller : Vishay | Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR9310TRLPBF | Hersteller : Vishay | Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR9310TRLPBF | Hersteller : Vishay | Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFR9310TRLPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Kind of package: reel; tape Drain-source voltage: -400V Drain current: -1.1A On-state resistance: 7Ω Type of transistor: P-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -7.2A Mounting: SMD Case: DPAK; TO252 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRFR9310TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 400V 1.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFR9310TRLPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W Kind of package: reel; tape Drain-source voltage: -400V Drain current: -1.1A On-state resistance: 7Ω Type of transistor: P-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 13nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -7.2A Mounting: SMD Case: DPAK; TO252 |
Produkt ist nicht verfügbar |