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IRFR9310TRLPBF

IRFR9310TRLPBF Vishay Semiconductors


sihfr931.pdf Hersteller: Vishay Semiconductors
MOSFET P-Chan 400V 1.8 Amp
auf Bestellung 14200 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
21+2.56 EUR
24+ 2.19 EUR
100+ 1.85 EUR
500+ 1.65 EUR
1000+ 1.54 EUR
9000+ 1.5 EUR
Mindestbestellmenge: 21
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Technische Details IRFR9310TRLPBF Vishay Semiconductors

Description: MOSFET P-CH 400V 1.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V.

Weitere Produktangebote IRFR9310TRLPBF nach Preis ab 2.04 EUR bis 3.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFR9310TRLPBF IRFR9310TRLPBF Hersteller : Vishay Siliconix sihfr931.pdf Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 953 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.64 EUR
10+ 3.03 EUR
100+ 2.41 EUR
500+ 2.04 EUR
Mindestbestellmenge: 8
IRFR9310TRLPBF IRFR9310TRLPBF Hersteller : Vishay sihfr931.pdf Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
IRFR9310TRLPBF IRFR9310TRLPBF Hersteller : Vishay sihfr931.pdf Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IRFR9310TRLPBF IRFR9310TRLPBF Hersteller : Vishay sihfr931.pdf Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IRFR9310TRLPBF IRFR9310TRLPBF Hersteller : VISHAY IRFR9310PBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Kind of package: reel; tape
Drain-source voltage: -400V
Drain current: -1.1A
On-state resistance:
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7.2A
Mounting: SMD
Case: DPAK; TO252
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
IRFR9310TRLPBF IRFR9310TRLPBF Hersteller : Vishay Siliconix sihfr931.pdf Description: MOSFET P-CH 400V 1.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9310TRLPBF IRFR9310TRLPBF Hersteller : VISHAY IRFR9310PBF.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -400V; -1.1A; Idm: -7.2A; 50W
Kind of package: reel; tape
Drain-source voltage: -400V
Drain current: -1.1A
On-state resistance:
Type of transistor: P-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 13nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -7.2A
Mounting: SMD
Case: DPAK; TO252
Produkt ist nicht verfügbar