auf Bestellung 8877 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.19 EUR |
| 15+ | 3.48 EUR |
| 100+ | 2.78 EUR |
| 250+ | 2.56 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.26 EUR |
| 3000+ | 1.92 EUR |
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Technische Details IRFRC20PBF-BE3 Vishay Semiconductors
Description: N-CHANNEL 600V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote IRFRC20PBF-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRFRC20PBF-BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRFRC20PBF-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V |
Produkt ist nicht verfügbar |