IRFS9N60ATRRPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 9.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 5.04 EUR |
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Technische Details IRFS9N60ATRRPBF Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V.
Weitere Produktangebote IRFS9N60ATRRPBF nach Preis ab 4.32 EUR bis 8.4 EUR
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IRFS9N60ATRRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 9.2A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 875 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFS9N60ATRRPBF | Hersteller : Vishay Semiconductors |
MOSFET 600V N-CH HEXFET D2PAK |
auf Bestellung 486 Stücke: Lieferzeit 14-28 Tag (e) |
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| IRFS9N60ATRRPBF | Hersteller : IR |
2006 |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFS9N60ATRRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRFS9N60ATRRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRFS9N60ATRRPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Pulsed drain current: 37A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| IRFS9N60ATRRPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; Idm: 37A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.2A Pulsed drain current: 37A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |