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IRFU1010ZPBF

IRFU1010ZPBF International Rectifier

IRSDS11230-1.pdf?t.download=true&u=5oefqw Hersteller: International Rectifier
Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
auf Bestellung 4825 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
562+1.27 EUR
Mindestbestellmenge: 562
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Technische Details IRFU1010ZPBF International Rectifier

Description: MOSFET N-CH 55V 42A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: IPAK (TO-251AA), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V.

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IRFU1010ZPBF Hersteller : IR IRSDS11230-1.pdf?t.download=true&u=5oefqw irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f 06+
auf Bestellung 20400 Stücke:
Lieferzeit 21-28 Tag (e)
IRFU1010ZPBF IRFU1010ZPBF Hersteller : Infineon Technologies irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
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IRFU1010ZPBF IRFU1010ZPBF Hersteller : Infineon / IR international rectifier_irfr1010zpbf-1169116.pdf MOSFET MOSFT 55V 91A 7.5mOhm 63nC
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