IRFU2607ZPBF

IRFU2607ZPBF

IRFU2607ZPBF

Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 75V 45A 3-Pin(3+Tab) IPAK
irfr2607zpbf.pdf
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Technische Details IRFU2607ZPBF

Description: MOSFET N-CH 75V 42A IPAK, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 110W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 50µA, Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Drain to Source Voltage (Vdss): 75V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Obsolete, Packaging: Tube, Manufacturer: Infineon Technologies, Supplier Device Package: IPAK (TO-251AA), Package / Case: TO-251-3 Short Leads, IPak, TO-251AA.

Preis IRFU2607ZPBF ab 0 EUR bis 0 EUR

IRFU2607ZPBF
IRFU2607ZPBF
Hersteller: Infineon / IR
MOSFET MOSFT 75V 45A 22mOhm 34nC Qg
international rectifier_irfr2607zpbf-1169121.pdf
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IRFU2607ZPBF
IRFU2607ZPBF
Hersteller: Rochester Electronics, LLC
Description: HEXFET N-CHANNEL POWER MOSFET
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1.44pF @ 25V
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRSDS10279-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
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IRFU2607ZPBF
IRFU2607ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A IPAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 50µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Infineon Technologies
Supplier Device Package: IPAK (TO-251AA)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
irfr2607zpbf.pdf?fileId=5546d462533600a401535630d6e42083
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen