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IRFW540ATM

IRFW540ATM Fairchild Semiconductor

FAIRS18180-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 30617 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
437+1.66 EUR
Mindestbestellmenge: 437
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Technische Details IRFW540ATM Fairchild Semiconductor

Description: MOSFET N-CH 100V 28A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 14A, 10V, Power Dissipation (Max): 3.8W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V.

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IRFW540ATM Hersteller : IR FAIRS18180-1.pdf?t.download=true&u=5oefqw IRF%28I%2CW%29540A.pdf TO-263/D2-PAK
auf Bestellung 9600 Stücke:
Lieferzeit 21-28 Tag (e)
IRFW540ATM Hersteller : SAMSUNG FAIRS18180-1.pdf?t.download=true&u=5oefqw IRF%28I%2CW%29540A.pdf TO-263
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
IRFW540ATM IRFW540ATM Hersteller : onsemi IRF%28I%2CW%29540A.pdf Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Produkt ist nicht verfügbar
IRFW540ATM IRFW540ATM Hersteller : onsemi / Fairchild IRFW540A-85401.pdf MOSFET 100V N-Channel A-FET
Produkt ist nicht verfügbar