auf Bestellung 4513 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 2.59 EUR |
| 28+ | 1.92 EUR |
| 100+ | 1.91 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.31 EUR |
| 2000+ | 1.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFZ14PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V, Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote IRFZ14PBF-BE3 nach Preis ab 1.31 EUR bis 2.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFZ14PBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 10A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 1942 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||
 |
IRFZ14PBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 10A |
Produkt ist nicht verfügbar |