auf Bestellung 3227 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.72 EUR |
| 11+ | 4.76 EUR |
| 100+ | 3.8 EUR |
| 250+ | 3.51 EUR |
| 500+ | 3.2 EUR |
| 1000+ | 3.15 EUR |
| 2000+ | 2.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFZ40PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 50A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V.
Weitere Produktangebote IRFZ40PBF-BE3 nach Preis ab 3.59 EUR bis 6.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFZ40PBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 50A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
auf Bestellung 746 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
IRFZ40PBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 50A |
Produkt ist nicht verfügbar |