Produkte > INFINEON TECHNOLOGIES > IRG4BC20KDSTRLP
IRG4BC20KDSTRLP

IRG4BC20KDSTRLP Infineon Technologies


irg4bc20kd-s.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 16A 60000mW 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IRG4BC20KDSTRLP Infineon Technologies

Description: IGBT 600V 16A 60W D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 54ns/180ns, Switching Energy: 340µJ (on), 300µJ (off), Test Condition: 480V, 9A, 50Ohm, 15V, Gate Charge: 34 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 32 A, Power - Max: 60 W.

Weitere Produktangebote IRG4BC20KDSTRLP

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRG4BC20KDSTRLP IRG4BC20KDSTRLP Hersteller : Infineon Technologies irg4bc20kd-spbf.pdf?fileId=5546d462533600a40153563f39562255 Description: IGBT 600V 16A 60W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 54ns/180ns
Switching Energy: 340µJ (on), 300µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 34 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 60 W
Produkt ist nicht verfügbar
IRG4BC20KDSTRLP IRG4BC20KDSTRLP Hersteller : Infineon / IR Infineon_IRG4BC20KD_S_DataSheet_v01_00_EN-1297946.pdf IGBT Modules 600V 10A
Produkt ist nicht verfügbar