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IRGS6B60KDTRRP

IRGS6B60KDTRRP Infineon Technologies


3510irgs6b60kdpbf.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 13A 90000mW 3-Pin(2+Tab) D2PAK T/R
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Technische Details IRGS6B60KDTRRP Infineon Technologies

Description: IGBT NPT 600V 13A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A, Supplier Device Package: D2PAK, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/215ns, Switching Energy: 110µJ (on), 135µJ (off), Test Condition: 400V, 5A, 100Ohm, 15V, Gate Charge: 18.2 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 13 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 26 A, Power - Max: 90 W.

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IRGS6B60KDTRRP IRGS6B60KDTRRP Hersteller : Infineon Technologies IRG(B,S,SL)6B60KDPbF.pdf Description: IGBT NPT 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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IRGS6B60KDTRRP IRGS6B60KDTRRP Hersteller : Infineon / IR irgs6b60kdpbf-1228520.pdf IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT
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