IRL100HS121 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 11A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
auf Bestellung 3421 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 2.68 EUR |
| 12+ | 2.19 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.18 EUR |
| 2000+ | 1.11 EUR |
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Technische Details IRL100HS121 Infineon Technologies
Description: MOSFET N-CH 100V 11A 6PQFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V, Power Dissipation (Max): 11.5W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 10µA, Supplier Device Package: 6-PQFN (2x2) (DFN2020), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V.
Weitere Produktangebote IRL100HS121 nach Preis ab 1.22 EUR bis 2.89 EUR
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IRL100HS121 | Hersteller : Infineon Technologies |
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IRL100HS121 | Hersteller : INFINEON TECHNOLOGIES |
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IRL100HS121 | Hersteller : Infineon Technologies |
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IRL100HS121 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 11A 6PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V Power Dissipation (Max): 11.5W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 10µA Supplier Device Package: 6-PQFN (2x2) (DFN2020) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRL100HS121 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2 Mounting: SMD Case: PQFN2X2 Kind of package: reel Power dissipation: 5.8W Gate charge: 3.7nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 7.8A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 42mΩ |
Produkt ist nicht verfügbar |