IRL2203NSPBF International Rectifier Corporation


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Technische Details IRL2203NSPBF International Rectifier Corporation

Description: MOSFET N-CH 30V 116A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V, Power Dissipation (Max): 3.8W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: D2PAK, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V.

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IRL2203NSPBF IRL2203NSPBF
Produktcode: 1761
irl2203nspbf.pdf?fileId=5546d462533600a40153565b62fd24fd Transistoren > MOSFET N-CH
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IRL2203NSPBF IRL2203NSPBF Hersteller : Infineon Technologies irl2203nspbf.pdf?fileId=5546d462533600a40153565b62fd24fd Description: MOSFET N-CH 30V 116A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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IRL2203NSPBF IRL2203NSPBF Hersteller : Infineon Technologies Infineon_IRL2203NS_DataSheet_v01_01_EN-1228582.pdf MOSFET 30V 1 N-CH HEXFET 7mOhms 40nC
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