IRL3202L Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 48A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
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Technische Details IRL3202L Vishay Siliconix
Description: MOSFET N-CH 20V 48A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: TO-262-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V.