IRL3502L

IRL3502L Vishay Siliconix


irl3502.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 110A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: TO-262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IRL3502L Vishay Siliconix

Description: MOSFET N-CH 20V 110A TO262-3, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: TO-262-3, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V.

Weitere Produktangebote IRL3502L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRL3502L IRL3502L Hersteller : Infineon / IR irl3502.pdf MOSFET
Produkt ist nicht verfügbar
IRL3502L Hersteller : Vishay / Siliconix irl3502.pdf MOSFET Discrete Semiconductor Products
Produkt ist nicht verfügbar