IRL40B212 Infineon Technologies
auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.07 EUR |
| 10+ | 5.9 EUR |
| 100+ | 4.68 EUR |
| 250+ | 4.32 EUR |
| 500+ | 4.06 EUR |
| 1000+ | 3.87 EUR |
| 3000+ | 3.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRL40B212 Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 150µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V.
Weitere Produktangebote IRL40B212
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IRL40B212 | Hersteller : INFINEON |
 Description: INFINEON - IRL40B212 - Leistungs-MOSFET, n-Kanal, 40 V, 195 A, 0.0015 ohm, TO-220AB, DurchsteckmontageTransistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 195 Qualifikation: - Verlustleistung Pd: 231 Gate-Source-Schwellenspannung, max.: 2.4 Verlustleistung: 231 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0015 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0015 SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
IRL40B212 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 40V 254A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|
 |
IRL40B212 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 179A Power dissipation: 231W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IRL40B212 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 150µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
IRL40B212 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 179A; 231W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 179A Power dissipation: 231W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |