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IRL510SPBF

IRL510SPBF Vishay


sihf510s.pdf Hersteller: Vishay
Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) SMD-220
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Technische Details IRL510SPBF Vishay

Description: MOSFET N-CH 100V 5.6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V, Power Dissipation (Max): 3.7W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.

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IRL510SPBF IRL510SPBF Hersteller : Vishay sihf510s.pdf Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) SMD-220
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IRL510SPBF IRL510SPBF Hersteller : Vishay Siliconix sihf510s.pdf Description: MOSFET N-CH 100V 5.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
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IRL510SPBF IRL510SPBF Hersteller : Vishay Semiconductors sihf510s.pdf MOSFET N-Chan 100V 5.6 Amp
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IRL510SPBF Hersteller : VISHAY sihf510s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 18A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 18A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
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