IRL60B216 Infineon Technologies
auf Bestellung 1550 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1550+ | 2.79 EUR |
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Technische Details IRL60B216 Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V.
Weitere Produktangebote IRL60B216 nach Preis ab 4.83 EUR bis 4.83 EUR
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IRL60B216 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 60V 305A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1550 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL60B216 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 60V 305A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1550 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRL60B216 | Hersteller : Infineon Technologies |
MOSFET N-CH 60V 305A TO-220 |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL60B216 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRL60B216 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15570 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRL60B216 | Hersteller : Infineon Technologies |
MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl |
Produkt ist nicht verfügbar |
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IRL60B216 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 215A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: THT Gate charge: 172nC Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |