IRL620STRLPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 130 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.86 EUR |
| 10+ | 4.05 EUR |
| 100+ | 3.22 EUR |
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Technische Details IRL620STRLPBF Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRL620STRLPBF nach Preis ab 2.24 EUR bis 4.97 EUR
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IRL620STRLPBF | Hersteller : Vishay Semiconductors |
MOSFET RECOMMENDED ALT IRL620SPBF |
auf Bestellung 695 Stücke: Lieferzeit 14-28 Tag (e) |
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IRL620STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R |
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IRL620STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRL620STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRL620STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRL620STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 50W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 21A Drain-source voltage: 200V Drain current: 5.2A On-state resistance: 1Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |