IRL620STRLPBF
IRL620STRLPBF
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 575 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 575 Stücke
Lieferzeit 21-28 Tag (e)
Technische Details IRL620STRLPBF
Description: MOSFET N-CH 200V 5.2A D2PAK, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: D2PAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V, Vgs (Max): ±10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), Drain to Source Voltage (Vdss): 200V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).
Preis IRL620STRLPBF ab 3.81 EUR bis 5.28 EUR
 Hersteller: Vishay Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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IRL620STRLPBF Hersteller: Vishay Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 200V 5.2A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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auf Bestellung 797 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 200V 5.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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