auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 108+ | 1.4 EUR |
| 118+ | 1.24 EUR |
| 133+ | 1.06 EUR |
| 250+ | 1.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRL630PBF Vishay
Description: MOSFET N-CH 200V 9A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IRL630PBF nach Preis ab 1.02 EUR bis 7.95 EUR
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IRL630PBF | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL630PBF | Hersteller : Vishay Semiconductors |
MOSFET 200V N-CH HEXFET |
auf Bestellung 1136 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL630PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 637 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL630PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.4Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL630PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.7A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 0.4Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL630PBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRL630PBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |