auf Bestellung 1600 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.59 EUR |
| 12+ | 4.71 EUR |
| 100+ | 3.85 EUR |
| 250+ | 3.48 EUR |
| 500+ | 3.38 EUR |
| 800+ | 2.96 EUR |
| 2400+ | 2.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRL630STRLPBF Vishay Semiconductors
Description: MOSFET N-CH 200V 9A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V, Power Dissipation (Max): 3.1W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IRL630STRLPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IRL630STRLPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
 |
IRL630STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
|
|
IRL630STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|
| IRL630STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263 Kind of package: reel; tape Drain-source voltage: 200V Drain current: 9A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 74W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 36A Mounting: SMD Case: D2PAK; TO263 Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
||
 |
IRL630STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
IRL630STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
|
| IRL630STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 74W; D2PAK,TO263 Kind of package: reel; tape Drain-source voltage: 200V Drain current: 9A On-state resistance: 0.5Ω Type of transistor: N-MOSFET Power dissipation: 74W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 36A Mounting: SMD Case: D2PAK; TO263 |
Produkt ist nicht verfügbar |