IRLH5034TRPBF

IRLH5034TRPBF Infineon Technologies


infineon-irlh5034-datasheet-v01_01-en.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 29A 8-Pin PQFN EP T/R
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Technische Details IRLH5034TRPBF Infineon Technologies

Description: MOSFET N-CH 40V 29A/100A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 150µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V.

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IRLH5034TRPBF IRLH5034TRPBF Hersteller : INFINEON TECHNOLOGIES irlh5034pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: PQFN5X6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRLH5034TRPBF IRLH5034TRPBF Hersteller : Infineon Technologies irlh5034pbf.pdf?fileId=5546d462533600a4015356636815259b Description: MOSFET N-CH 40V 29A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Produkt ist nicht verfügbar
IRLH5034TRPBF IRLH5034TRPBF Hersteller : Infineon Technologies irlh5034pbf.pdf?fileId=5546d462533600a4015356636815259b Description: MOSFET N-CH 40V 29A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V
Produkt ist nicht verfügbar
IRLH5034TRPBF IRLH5034TRPBF Hersteller : Infineon Technologies Infineon_IRLH5034_DataSheet_v01_01_EN-3166609.pdf MOSFET 40V 1 N-CH HEXFET PWR MOSFET 2.4mOhms
Produkt ist nicht verfügbar
IRLH5034TRPBF IRLH5034TRPBF Hersteller : INFINEON TECHNOLOGIES irlh5034pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6
Mounting: SMD
Power dissipation: 3.6W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 29A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Case: PQFN5X6
Produkt ist nicht verfügbar