IRLI520GPBF

IRLI520GPBF

Hersteller: Vishay
Trans MOSFET N-CH 100V 7.2A 3-Pin(3+Tab) TO-220 Full-Pak
90397.pdf
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Technische Details IRLI520GPBF

Description: MOSFET N-CH 100V 7.2A TO220FP, Supplier Device Package: TO-220-3, Package / Case: TO-220-3 Full Pack, Isolated Tab, Operating Temperature: -55°C ~ 175°C (TJ), Power Dissipation (Max): 37W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V, Vgs (Max): ±10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Rds On (Max) @ Id, Vgs: 270mOhm @ 4.3A, 5V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tube.

Preis IRLI520GPBF ab 0 EUR bis 0 EUR

IRLI520GPBF
IRLI520GPBF
Hersteller: Vishay Semiconductors
MOSFET 100V N-CH HEXFET HEXDI
VISH_S_A0012821950_1-2572058.pdf
auf Bestellung 299 Stücke
Lieferzeit 14-28 Tag (e)
IRLI520GPBF
IRLI520GPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.2A TO220FP
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.3A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
90397.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen