Produkte > IRL > IRLL014PBF

IRLL014PBF


sihll014.pdf Hersteller:
IRLL014PBF Транзисторы HEXFET
auf Bestellung 102 Stücke:

Lieferzeit 7-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details IRLL014PBF

Description: MOSFET N-CH 60V 2.7A SOT223, Packaging: Tube, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.

Weitere Produktangebote IRLL014PBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRLL014PBF IRLL014PBF Hersteller : Vishay sihll014.pdf Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223
Produkt ist nicht verfügbar
IRLL014PBF IRLL014PBF Hersteller : Vishay Siliconix sihll014.pdf Description: MOSFET N-CH 60V 2.7A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
IRLL014PBF IRLL014PBF Hersteller : Vishay / Siliconix sihll014.pdf MOSFET RECOMMENDED ALT IRLL014TRPBF
Produkt ist nicht verfügbar