auf Bestellung 46719 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.68 EUR |
| 1000+ | 1.44 EUR |
| 2500+ | 1.23 EUR |
| 5000+ | 1.18 EUR |
Produktrezensionen
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Technische Details IRLL014TRPBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 2.7A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Weitere Produktangebote IRLL014TRPBF-BE3 nach Preis ab 1.33 EUR bis 4.1 EUR
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IRLL014TRPBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 2.7A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
auf Bestellung 2396 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLL014TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 |
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| IRLL014TRPBF-BE3 | Hersteller : Vishay |
IRLL014TRPBF-BE3 |
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| IRLL014TRPBF-BE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Pulsed drain current: 22A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IRLL014TRPBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 2.7A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRLL014TRPBF-BE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; Idm: 22A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Pulsed drain current: 22A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |