IRLL2703TRPBF Infineon Technologies
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Technische Details IRLL2703TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 3.9A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.
Weitere Produktangebote IRLL2703TRPBF
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IRLL2703TRPBF | Hersteller : INFINEON |
 Description: INFINEON - IRLL2703TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 5.5 A, 0.045 ohm, SOT-223, OberflächenmontageTransistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 5.5 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.1 Bauform - Transistor: SOT-223 Anzahl der Pins: 3 Produktpalette: HEXFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.045 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.4 SVHC: No SVHC (27-Jun-2018) |
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IRLL2703TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRLL2703TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 5.5 A, 0.045 ohm, SOT-223, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 5.5 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.1 Bauform - Transistor: SOT-223 Anzahl der Pins: 3 Produktpalette: HEXFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.045 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.4 SVHC: No SVHC (27-Jun-2018) |
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IRLL2703TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Pulsed drain current: 16A Power dissipation: 1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 45mΩ Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
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IRLL2703TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 3.9A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
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IRLL2703TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 3.9A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
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IRLL2703TRPBF | Hersteller : Infineon / IR |
MOSFET MOSFT 30V 5.5A 45mOhm 9.3nC Log Lvl |
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IRLL2703TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Pulsed drain current: 16A Power dissipation: 1W Case: SOT223 Gate-source voltage: ±16V On-state resistance: 45mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |