auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 196+ | 0.81 EUR |
| 450+ | 0.71 EUR |
| 900+ | 0.64 EUR |
| 1350+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLR014PBF Vishay
Description: MOSFET N-CH 60V 7.7A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Weitere Produktangebote IRLR014PBF nach Preis ab 0.35 EUR bis 2.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRLR014PBF | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2987 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLR014PBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.7A; Idm: 31A; 25W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR014PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR014PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK |
auf Bestellung 288 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR014PBF | Hersteller : Vishay Semiconductors |
MOSFET RECOMMENDED ALT IRLR014 |
auf Bestellung 34070 Stücke: Lieferzeit 14-28 Tag (e) |
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IRLR014PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 7.7A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
auf Bestellung 2410 Stücke: Lieferzeit 21-28 Tag (e) |
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IRLR014PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR014PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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IRLR014PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |