IRLR110TRLPBF

IRLR110TRLPBF

IRLR110TRLPBF

Hersteller: Vishay
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
sihlr110.pdf
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Technische Details IRLR110TRLPBF

Description: MOSFET N-CH 100V 4.3A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Part Status: Active, Supplier Device Package: D-Pak, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount.

Preis IRLR110TRLPBF ab 0 EUR bis 0 EUR

IRLR110TRLPBF
IRLR110TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
sihlr110.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen