IRLR110TRLPBF VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
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Technische Details IRLR110TRLPBF VISHAY
Description: MOSFET N-CH 100V 4.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.
Weitere Produktangebote IRLR110TRLPBF
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRLR110TRLPBF | Hersteller : Vishay | Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRLR110TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 4.3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRLR110TRLPBF | Hersteller : Vishay / Siliconix | MOSFET N-Chan 100V 4.3 Amp |
Produkt ist nicht verfügbar |
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IRLR110TRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |