auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLR110TRPBF Vishay
Description: MOSFET N-CH 100V 4.3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.
Weitere Produktangebote IRLR110TRPBF nach Preis ab 0.46 EUR bis 2.16 EUR
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IRLR110TRPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR110TRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR110TRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR110TRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 4.3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRLR110TRPBF | Hersteller : Vishay Semiconductors |
MOSFET RECOMMENDED ALT IRLR110TR |
auf Bestellung 29865 Stücke: Lieferzeit 14-28 Tag (e) |
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IRLR110TRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 4.3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
auf Bestellung 18621 Stücke: Lieferzeit 21-28 Tag (e) |
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IRLR110TRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR110TRPBF Produktcode: 61266 |
IC > IC andere 8542 39 90 00 |
Produkt ist nicht verfügbar
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IRLR110TRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IRLR110TRPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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IRLR110TRPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Pulsed drain current: 17A Power dissipation: 25W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |