auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
254+ | 0.62 EUR |
255+ | 0.6 EUR |
259+ | 0.57 EUR |
265+ | 0.53 EUR |
266+ | 0.51 EUR |
500+ | 0.48 EUR |
1000+ | 0.45 EUR |
3000+ | 0.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLR120TRLPBF Vishay
Description: MOSFET N-CH 100V 7.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Weitere Produktangebote IRLR120TRLPBF nach Preis ab 0.43 EUR bis 3.82 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRLR120TRLPBF | Hersteller : Vishay | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
IRLR120TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
IRLR120TRLPBF | Hersteller : Vishay Semiconductors | MOSFET RECOMMENDED ALT IRLR120TRL |
auf Bestellung 6478 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
IRLR120TRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
IRLR120TRLPBF | Hersteller : Vishay | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRLR120TRLPBF | Hersteller : Vishay | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRLR120TRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
IRLR120TRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.7A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.7A Pulsed drain current: 31A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±10V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |