auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 241+ | 0.65 EUR |
| 253+ | 0.6 EUR |
| 260+ | 0.56 EUR |
| 261+ | 0.54 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRLU024PBF Vishay
Description: MOSFET N-CH 60V 14A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V.
Weitere Produktangebote IRLU024PBF nach Preis ab 0.45 EUR bis 3.93 EUR
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IRLU024PBF | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) IPAK |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU024PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) IPAK |
auf Bestellung 2320 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU024PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.2A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 587 Stücke: Lieferzeit 7-14 Tag (e) |
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IRLU024PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.2A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9.2A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 587 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU024PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) IPAK |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU024PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) IPAK |
auf Bestellung 2413 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU024PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) IPAK |
auf Bestellung 2413 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU024PBF | Hersteller : Vishay Semiconductors |
MOSFET RECOMMENDED ALT IRLU024 |
auf Bestellung 5604 Stücke: Lieferzeit 14-28 Tag (e) |
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IRLU024PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 14A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
auf Bestellung 2565 Stücke: Lieferzeit 21-28 Tag (e) |
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IRLU024PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) IPAK |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |